Germanium Photodiodes

Germanium photodiodes are commonly used to measure optical power in the NIR range, especially in cost-sensitive applications or where a large-area detector is needed. However, germanium detectors have a lower shunt resistance and higher dark current than similarly-sized InGaAs detectors, resulting in higher noise levels overall. Therefore, germanium detectors are well suited for applications where the signal being detected is much higher than the noise floor. GPD Optoelectronics offers an “HS” series of germanium photodiodes which have higher-than-typical shunt resistance for improved performance.

Features

  • Chip diameters from 1 mm to 25 mm
  • Spectral response from 800 nm to 1700 nm
  • High linearity > 10 dBm
  • Multiple window and lens options
  • Optical filters available (neutral density, bandpass, etc.)
  • Thermoelectric cooling options
  • Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more

Applications

  • Optical power meters
  • LED/LD characterization and burn-in diagnostics
  • Spectroscopy
  • LED/LD characterization
  • Eye-safe laser detection sensors

 Opto/Electronic Characteristics @ 23 ºC ± 2 ºC

Units
Active Diameter 1 1 1 2 2 2 3 3 3 5 5 5 10×10 mm
Part Number GB1-T18 GB1-LCC6 GH1-T18 GH1-LCC6 GV1-T18 GV1-LCC6 GB2-T5 GB2-LCC6 GH2-T5 GH2-LCC6 GV2-T5 GV2-LCC6 GB3-T5 GB3-LCC28 GH3-T5 GH3-LCC28 GV3-T5 GV3-LCC28 GB5-T8 GB5-LCC28 GH5-T8 GH5-LCC28 GV5-T8 GV5-LCC28 GH10-T9 GH10-LCC28
Spectral Response 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 nm
Rλ(typ)@ 850 nm 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 A/W
Rλ(typ) @ 1300 nm 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 A/W
Rλ(typ)@ 1550 nm 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 A/W
RSHUNT (min/typ) 20/40 60/100 200/280 6/12 30/60 80/120 4/8 25/35 40/65 2/4 10/15 15/20 2/3.5
IDARK (max) 3 1.5 0.5 10 3 1 30 4 3 40 15 5 50 μA
CDIODE (max) 85 300 1,450 300 1,200 9,000 800 4,000 13,000 3,000 6,000 35,000 30,000 pF
VREVERSE 10 2 0.3 10 2 0.3 5 1 0.25 3 1 0.1 0.5 V
NEP 1.5 1 0.6 3 1.4 0.8 4 2 1 5 3 2 6 pW/Hz1/2
Linearity 8 8 8 8 8 8 8 8 8 8 8 8 8 dB
TO Packages TO-18 TO-18 TO-18 TO-5 TO-5 TO-5 TO-5 TO-5 TO-5 TO-8 TO-8 TO-8 TO-9
Leadless Chip Carrier LCC-6 LCC-6 LCC-6 LCC-6 LCC-6 LCC-6 LCC-28 LCC-28 LCC-28 LCC-28 LCC-28 LCC-28 Hybrid
Storage Temperature -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 ºC
Operating Temperature -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 ºC
Max Reverse Voltage 15 3 0.3 15 3 0.5 10 3 0.5 5 3 0.3 1 V
Max Reverse Current -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 mA
Max Forward Current 10 10 10 10 10 10 10 10 10 10 10 10 10 mA
We offer several germanium chip designs based on preferred operating voltage:
GM series:

Designed for high-speed applications with reverse bias > 10 V

HS series:

Designed for applications with reverse bias < 5 V

VHS series:

Designed for zero bias applications

VHR series:

Designed for zero bias applications requiring high shunt resistance

GPD qualifications

Our compliance, certificates, and capabilities.