Germanium Photodiodes

Infrared Detection and Telecom Applications

Germanium photodiodes are widely used for measuring optical power in the near-infrared (NIR) range, particularly in cost-sensitive systems or applications requiring large-area detectors. Compared with similarly sized InGaAs detectors, however, germanium devices typically exhibit lower shunt resistance and higher dark current, which leads to increased noise.

As a result, germanium photodiodes are best suited for applications in which the detected signal is significantly higher than the noise floor. To improve performance, GPD Optoelectronics offers its “HS” series of germanium photodiodes, designed with higher-than-typical shunt resistance.

Germanium Photodiodes Graphic New
Ge Product Family Datasheet

Features

  • Chip diameters from 1 mm to 25 mm
  • Spectral response from 800 nm to 1700 nm
  • High linearity > 10 dBm
  • Multiple window and lens options
  • Optical filters available (neutral density, bandpass, etc.)
  • Thermoelectric cooling options
  • Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more

Applications

  • Optical power meters
  • LED/LD characterization and burn-in diagnostics
  • Spectroscopy
  • LED/LD characterization
  • Eye-safe laser detection sensors

Operating Voltage

We offer several germanium chip designs based on the preferred operating voltage.

  • GM series: Designed for high-speed applications with reverse bias > 10 V
  • HS series: Designed for applications with reverse bias < 5 V
  • VHS series: Designed for zero-bias applications
  • VHR series: Designed for zero-bias applications requiring high shunt resistance

Opto/Electronic Characteristics @ 23 ºC ± 2 ºC

Units
Active Diameter 1 1 1 2 2 2 3 3 3 5 5 5 10×10 mm
Part Number GB100-T18
GB100-LCC6
GH100-T18
GH100-LCC6
GV100-T18
GV100-LCC6
GB200-T5
GB200-LCC6
GH200-T5
GH200-LCC6
GV200-T5
GV200-LCC6
GB300-T5
GB300-LCC28
GH300-T5
GH300-LCC28
GV300-T5
GV300-LCC28
GB500-T8
GB500-LCC28
GH500-T8
GH500-LCC28
GV500-T8
GV500-LCC28
GH10M-T9
GH10M-LCC28
Legacy Part Number GM5 GM5HS GM5VHS GM6 GM6HS GM6VHS GM7 GM7HS GM7VHS GM8 GM8HS GM8VHS GM10HS
Spectral Response 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 800-1800 nm
Rλ(typ)@ 850 nm 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 A/W
Rλ(typ) @ 1300 nm 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 A/W
Rλ(typ)@ 1550 nm 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 A/W
RSHUNT (min/typ) 20/40 60/100 200/280 6/12 30/60 80/120 4/8 25/35 40/65 2/4 10/15 15/20 2/3.5
IDARK (max) 3 1.5 0.5 10 3 1 30 4 3 40 15 5 50 μA
CDIODE (max) 85 300 1,450 300 1,200 9,000 800 4,000 13,000 3,000 6,000 35,000 30,000 pF
VREVERSE 10 2 0.3 10 2 0.3 5 1 0.25 3 1 0.1 0.5 V
NEP 1.5 1 0.6 3 1.4 0.8 4 2 1 5 3 2 6 pW/Hz1/2
Linearity 8 8 8 8 8 8 8 8 8 8 8 8 8 dB
TO Packages TO-18 TO-18 TO-18 TO-5 TO-5 TO-5 TO-5 TO-5 TO-5 TO-8 TO-8 TO-8 TO-9
Leadless Chip Carrier LCC-6 LCC-6 LCC-6 LCC-6 LCC-6 LCC-6 LCC-28 LCC-28 LCC-28 LCC-28 LCC-28 LCC-28 Hybrid
Storage Temperature -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 ºC
Operating Temperature -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 ºC
Max Reverse Voltage 15 3 0.3 15 3 0.5 10 3 0.5 5 3 0.3 1 V
Max Reverse Current -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 mA
Max Forward Current 10 10 10 10 10 10 10 10 10 10 10 10 10 mA