High-Speed InGaAs Photodiodes
Fast Optical Signal Detection
InGaAs photodiodes are widely used for detecting wavelengths in the near-infrared (NIR) range. Compared with germanium detectors, InGaAs devices offer significantly higher shunt resistance and lower dark current, making them well-suited for sensitive measurements and other low-noise applications.
High-speed InGaAs photodiodes provide fast response times, high quantum efficiency, and excellent linearity across the near-infrared spectrum. These characteristics make them ideal for demanding applications such as fiber-optic communications, spectroscopy, optical sensing, and laser power monitoring, where accurate, stable detection of low-level signals is essential.
Features
- Chip diameters from 60 μm to 300 μm
- Spectral response from 850 nm to 1700 nm
- Low dark current for high sensitivity
- Low capacitance for high speed (up to 2.5 GHz, depending on package)
- Wide packaging variety: TO packages, fiber pigtails, chip on ceramic submount, and more
Applications
- Optical communication
- Time-resolved fluorescence measurements
- LED/LD temporal characterization
- LiDAR
- Free Space Optics (FSO)