Datasheets
Technical Datasheets for High-Performance Photodiodes
Browse comprehensive data sheets for GPD’s photodiodes, including InGaAs, germanium, and specialty detectors. Each resource provides detailed performance specifications, packaging options, and key operating characteristics. Use these insights to confidently select and integrate the right photodiode for your application.
Small Area InGaAs Photodiode Datasheet
The Small Area InGaAs Photodiode family covers active diameters from 100 µm to 1 mm across five part numbers, with a spectral response of 800 to 1700 nm and a peak wavelength of 1550 nm. Target applications include optical power measurement, spectroscopy, medical diagnostics, and fiber optic receivers, with options for extended cutoff wavelengths up to 2.6 µm and integrated electronics. Devices are available in TO-46, TO-18, and LCC-6 packages and carry qualifications including ISO 9001:2015, MIL-STD-883/750, and ITAR registration.
Large Area InGaAs Photodiode Datasheet
GPD Optoelectronics’ Large Area InGaAs Photodiodes cover active diameters from 1 to 5 mm, with a standard 1.7 µm cutoff wavelength and a spectral response range of 800 to 1700 nm, targeting applications including spectroscopy, optical power measurement, medical diagnostics, and fiber-optic communications. The product family spans seven part numbers with varying capacitance, dark current, and noise characteristics, and is available in multiple packaging configurations, including TO headers, ceramic leadless chip carriers, and BNC.
Germanium Photodiode Datasheet
Germanium Photodiodes cover the 800-1700 nm spectral range, making them ideal for fiber optic communications, spectroscopy, optical power measurement, and medical diagnostics. Available in active areas from 1 to 5 mm diameter and 10 mm square, they come in three performance series: GB for high-speed applications, GH for low-voltage use, and GV for zero-bias operation. Packaging options include TO headers, ceramic LCC carriers, and BNC. GPD holds ISO 9001:2015 certification and is ITAR registered.
Germanium GE Avalanche Photodiode APD Family Datasheet
The Germanium Avalanche Photodiode (APD) family features a 40µm active diameter, 800nm to 1700nm spectral response, and typical quantum efficiency of 72–80%, delivering the high sensitivity and fast response required for demanding applications including infrared sensing, optical communications, photon counting, LiDAR, time-of-flight ranging, spectroscopy, and free-space optical communications.
High Speed InGaAs Photodiode Family Datasheet
Our High-Speed InGaAs Photodiodes are designed for near-infrared detection up to a 1.7 µm cutoff wavelength and optimized for applications such as optical communications, LiDAR, time-resolved measurements, and free-space optics. These photodiodes offer chip diameters from 60–300 μm, spectral response from 850–1700 nm, low dark current and capacitance enabling speeds up to 2.5 GHz, and wide packaging options.
Low Polarization Dependent Loss InGaAs Photodiode Family Datasheet
Our Low Polarization-Dependent Loss (PDL) InGaAs Photodiode family features active diameters from 0.3 to 10 mm with a 1.7 µm cutoff wavelength, offering PDL of 5/10 mdB (typ/max) across all models. These photodiodes are suited for applications such as optical power meters, back-facet laser diode monitoring, and polarization characterization of fiber optic components.
InGaAs Avalanche Photodiode (APD) Datasheet
The InGaAs Avalanche Photodiode (APD) family consists of three devices (IAV008-T46, IAV020-T46, and IAV035-T46) with active diameters of 80, 200, and 350 µm, all operating across a spectral range of 1.0 to 1.63 µm in a TO-46 package. These APDs are designed for high-sensitivity applications such as LiDAR, free space optics, optical communications, and optical time domain reflectometry.
Two-Color Detector Datasheet
Two-Color Dectectors integrate two detector materials in a single package to enable simultaneous dual-band detection across configurations including InGaAs/InGaAs, Si/InGaAs, and Si/Ge. Stacking complementary materials allows each detector to cover a distinct spectral band, making them well suited for pyrometry, spectroscopy, optical testing, and medical diagnostics. Standard packaging includes TO-39 and TO-8 headers, with options for custom lenses, fiber-optic packaging, integrated TEC or transimpedance amplifiers, and extended InGaAs cutoff wavelengths to 2.6 µm.
Extended InGaAs Photodiode Datasheet
Our Extended InGaAs Photodiodes push detection beyond the standard 1.7 µm InGaAs cutoff, offering four cutoff wavelength options (1.9, 2.05, 2.2, and 2.6 µm) with active diameters from 0.3 mm to 3 mm, targeting gas sensing, hydrocarbon sensing, flame detection, FTIR, spectroscopy, and SWIR photodetection. All variants deliver a typical peak responsivity of 1.0 A/W, with trade-offs in dark current, shunt resistance, and noise as the cutoff wavelength extends. Available in TO-46, TO-18, TO-5, LCC-6, and LCC-28 packages with thermoelectric cooling options.
Tetralateral Photodiode GMTL8HS Datasheet
The Tetralateral Photodiodes GMTL8HS are germanium tetralateral position-sensing detectors, featuring a 5 mm circular active region operating from 750 to 1620 nm, designed for position-sensing and beam-alignment applications. Packaged in a 5-lead TO-8 with an AR-coated sapphire window, it provides four cathode outputs (X1, X2, Y1, Y2) plus a common anode, enabling continuous 2D position calculation from a single illuminated spot. Typical responsivity reaches 0.85 A/W at 1550 nm, with a shunt resistance of 15 kΩ and a maximum dark current of 15 µA at 1V reverse bias.
Tetralateral Photodiode GMTL10HS Datasheet
The Tetralateral Photodiodes GMTL10HS are germanium tetralateral position-sensing detectors, featuring a large 10 x 10 mm Ge chip with a 4.5 x 4.5 mm linear sensing region, packaged in a 5-lead TO-9 with a sapphire window and operating across 750 to 1620 nm for position sensing and beam alignment applications. Its four cathode pins (X1, X2, Y1, Y2) plus a common anode/ground enable continuous 2D spot position calculation across the active surface.
InGaAs Quadrant Photodiode Datasheet
InGaAs Quadrant Photodiodes offer four-segment detection across the 800-1700 nm range, with active diameters from 0.GPD Optoelectronics’ InGaAs Quadrant Photodiodes offer four-segment detection across the 800-1700 nm range, with active diameters from 0.5 to 5 mm. Designed for beam steering, laser guidance, optical tweezers, and beam profiling, they deliver high responsivity and low crosstalk per cell. Extended wavelength variants reach 2.6 µm. Packaging options include TO headers and ceramic LCC carriers. Like all GPD products, they are ISO 9001:2015 certified, ITAR registered, and manufactured in Salem, NH.
Multi Cell Photoreceiver (MCPR) Datasheet
The MCPR (Multi Cell Photoreceiver) is GPD Optoelectronics’ photodetector development kit, designed for free-space optical communications, beam steering, polarization testing, and multi-wavelength photoreceivers. Its machined, anodized aluminum housing provides shielding and cooling, while connector-free interchangeable photodiodes support all GPD multi-cell detectors. Eight-channel integrated transimpedance amplifiers deliver ultra-low-noise, Johnson-noise-limited performance. Cage-system-ready and open by design, the MCPR integrates easily into existing optical setups and custom electronics.