Extended InGaAs Photodiodes

Features

  • Chip active diameters from 0.3 mm to 3 mm
  • Extended cutoff wavelengths (1.9μm, 2.05μm, 2.2μm and 2.6μm)
  • High shunt resistance
  • Multiple window and lens options
  • Packages (TO-46, TO-18 or TO-5)
  • Thermoelectric cooled options available

Applications

  • Gas sensing
  • Hydrocarbon sensing
  • Flame and spark detection
  • FTIR
  • Spectroscopy
  • SWIR photodetection

Optoelectronic Characteristics @ 23 ºC ± 2 ºC

Wavelength Family

1.9

2.05

2.2

2.6

um

Model

N19S1

N21S1

N22S1

N26S1

Active Diameter

1

1

1

1

mm

Spectral Response Range

1000 to 1900

1000 to 2100

1000 to 2300

1000 to 2600

nm

Peak Wavelength (typ)

1750

1900

2000

2000

nm

Responsivity @ 1750 nm

0.9 / 1.0

0.9 / 1

0.9 / 1

0.9 / 1.0

A/W

Shunt Resistance (min/typ)

1 / 2.5

0.01M / 0.3M

40k / 75k

3 / 6

Dark Current (typ/max) @ VR

1.5 / 4 @ 1 V

3 / 4 @ 1 V

3 / 20 @ 1 V

10 / 25 @ 0.5 V

µA

Capacitance (typ/max) @ 0 V

120 / 700

180 / 500

465 / 800

500 / 800

pF

NEP @ λPEAK @ 0 V (typ)

80

230

466

1650

fW/Hz1/2

Linearity (± 0.2 dB) @ 0 V

6

6

6

6

dBm

Package

TO-46/TO-18

TO-46/TO-18

TO-46/TO-18

TO-46/TO-18

Storage Temperature

-40 to 125

-40 to 125

-40 to 125

-40 to 125

ºC

Operating Temperature

-40 to 85

-40 to 85

-40 to 85

-40 to 85

ºC

Max Reverse Voltage

2

2

1

0.5

V

Max Reverse Current

-10

-10

-10

-10

mA

Max Forward Current

10

10

10

10

mA

All Cut Off Wavelengths are available in 0.3 mm, 0.5 mm, 2 mm, and 3 mm diameter active area detectors

GPD qualifications

Our compliance, certificates, and capabilities.