GPD Optoelectronics was founded in 1973 as Germanium Power Devices Corp. We began by making high-quality germanium transistors, but since the early 1980’s we have earned our place as a trusted manufacturer of both germanium and indium gallium arsenide photodiodes.
As we gained experience, we grew our technical capabilities and production capacity, eventually doubling our size with a move to a new facility in Salem, NH.
Founded as Germanium Power Devices Corp
Introduced Ge pn Detector Products
Introduced InGaAs Detector Products
Relocated to Salem, New Hampshire- Doubling Capacity
Introduced Extended- Wavelength InGaAs Detector Products
Introduced Customizable Two-Color Detectors
Introduced InGaAs Quadrant Photodiodes
Increased Surface Mount Packaging Options
We believe that by operating with integrity and trust we drive constant organizational improvement, which strengthens our relationships with our employees and customers. Customer success remains our highest priority, so we strive to deliver high-quality products on time, and provide unparalleled service, responsiveness, and collaboration. While we offer a variety of off-the-shelf products for customers with pressing delivery needs, we specialize in providing customized parts that are uniquely tailored to your application. Need something a little different? We have the agility to design and deliver prototypes of custom products, often within just a few weeks.
The process starts with our innovative engineering team and in-house wafer design and processing. Next, our skilled machinists along with our CNC and 3D printing capabilities allow us to respond quickly to a variety of design requirements. We maintain class 1,000 and 10,000 clean rooms in our production facilities, and have hermetic sealing capability as well as automated assembly and testing. GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are subjected to Telcordia testing requirements (TA-NWT-00093), MIL-STD-883 test methods and/or customer specifications.