InGaAs avalanche photodiodes are used in situations where more sensitivity is needed than is achievable with standard photodiodes. These devices use an internal gain mechanism to generate secondary electrons via impact ionization. This in turn sets off an electron avalanche which amplifies the initial signal for easier measurement. APDs are often used in applications having very low signal levels, such as LiDAR or optical communication.


  • Chip active diameters from 80 μm to 350 μm
  • Spectral response from 900 nm to 1650 nm
  • Linear operation
  • Low dark current for high sensitivity
  • Low capacitance for high speed
  • Fiber pigtail available (single-mode or multi-mode)
  • Package flexibility (TO packages and ceramic submounts, with ball lens option)


  • LiDAR
  • Free space optics
  • High-sensitivity photometry
  • Optical time domain reflectometer (OTDR)
  • Optical communication

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