• Large and Small Area
• Wide Performance Range
• TE Coolers and Dewars Available
• Filtered Windows for High Power Available
• Standard and Custom Packages/ Surmounts

InGaAs photodetectors, as well as Si/Ge dual detectors to meet the most demanding military and commercial applications. This brochure contains technical specifications for Ge pn, pin and dual (Si/Ge) detectors; other brochures describe InGaAs detectors (including extended-wavelength) and APDs.

Custom devices and packages are also available. Both Germanium and InGaAs are sensitive to light in the near-infrared region of the spectrum. While InGaAs detectors offer better noise performance, Ge detectors offer significant cost advantages, particularly where a large detection area is required. In addition, Ge detectors have linear response at higher optical input power levels. 

• OTDR
• Infrared Sensing
• Telecommunications
• Optical Communications
• Short Haul Telecom/ Datacom Receivers.

• High Responsivity
• High Shunt Resistance
• Low Capacitance: High Speed
• Planar Design for High Reliability

• High Responsivity
• High Shunt Resistance
• Low Capacitance: High Speed
• Planar Design for High Reliability

 GPD Optoelectronics Corp. (Formerly Germanium Power Devices Corp.) has been a manufacturer of power transistors and diodes since 1973 and a manufacturer of infrared photodetectors for more than ten years. GPD offers Germanium p-n, p-i-n, APD and InGaAs p-i-n high-speed and large area photodetectors for infrared radiation detection and telecommunications applications. GPD can offer you a photodetector that meets your technical and cost requirements.

GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are subjected to Bellcore testing requirements (TA-NWT-00093), MIL-STD-883 test methods and/or customer specifications.