InGaAs Photodiodes are infrared photodetectors that convert near-infrared light into electrical current using indium gallium arsenide as the absorption material. They are commonly used for detection across the ~0.9–1.7 µm range, including 1064 nm, 1310 nm, and 1550 nm, in optical communications, power monitoring, spectroscopy, and sensing. Key selection factors include active area, bandwidth, dark current, linearity, and packaging for fiber or free-space coupling. GPD Optoelectronics manufactures InGaAs photodiodes for these applications.
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