High Speed InGaAs Photodiodes are indium gallium arsenide detectors designed for fast response and wide electrical bandwidth at near-infrared wavelengths, typically including 1310 nm and 1550 nm. High-speed performance is achieved by reducing junction capacitance and optimizing device geometry and packaging to minimize parasitics. These photodiodes are used in optical communications, high-speed test equipment, and pulsed laser detection. GPD Optoelectronics manufactures high speed InGaAs photodiodes for these applications.
Everyone’s talking GPUs, but the AI buildout has a quieter bottleneck: getting data into and out of chips fast enough. As data centers push toward 800G and 1.6T, silicon can’t detect the light. Germanium and InGaAs photodiodes are the unsung heroes making it work.