An InGaAs Photodiode is a semiconductor photodetector that uses indium gallium arsenide to absorb near-infrared photons and generate a photocurrent proportional to incident optical power. It is widely used for detection in the ~0.9–1.7 µm range, including 1310 nm and 1550 nm, in telecom receivers, optical power meters, and instrumentation. Key parameters include responsivity, dark current, capacitance, linearity, and bandwidth. GPD Optoelectronics manufactures InGaAs photodiodes for infrared detection applications.
Everyone’s talking GPUs, but the AI buildout has a quieter bottleneck: getting data into and out of chips fast enough. As data centers push toward 800G and 1.6T, silicon can’t detect the light. Germanium and InGaAs photodiodes are the unsung heroes making it work.